在纳米制作中,光刻是控制微芯片大小的基本图案步骤。在光刻期间,低波长的电源通过光学元件通过图像进行调节,然后将其尺寸降低,并以更多的光学功能降低到覆盖底物(通常为硅)的光敏化学薄膜中。重复此步骤,直到底物上的所有可用表面积都以相同的图像暴露为止。结果称为层。需要多个裸露的层来创建构成芯片的复杂显微镜结构。为了防止由于层之间的连接故障而引起的收益问题,层之间的所有模式都必须按预期排列。
为了确保不影响吞吐量的层对齐,ASML的Twinscan光刻系统必须限制其在曝光步骤之前测量的对齐标记的数量。一般规则是,测量对齐标记所需的时间不能超过序列中前一个晶圆所需的时间。由于适当的覆盖模型校正所需的大量覆盖标记,因此测量来自Twinscan系统的每个晶圆是不可行的。
ASML used MATLAB®and Statistics and Machine Learning Toolbox™ to develop virtual overlay metrology software. This software applies machine learning techniques to come up with a predicted estimate of overlay metrology for every wafer, using alignment metrology data.
“The work we’ve done with MATLAB and machine learning demonstrates industry leadership in the best use of existing metrology,” says Emil Schmitt-Weaver, applications development engineer at ASML. “The papers we’ve published on this work have attracted the interest of customers looking to improve their manufacturing processes with ASML products.”