Convert and rectify power using discrete semiconductor devices.
Current Limiter | Behavioral model of current limiter |
二极管 | Piecewise or exponential diode |
Gate Driver | Behavioral model of gate driver integrated circuit |
GTO | Gate Turn-Off Thyristor |
Half-Bridge Driver | Behavioral model of half-bridge driver integrated circuit |
Half-Bridge (Ideal, Switching) | Half-bridge with ideal switches and thermal port |
理想的半导体开关 | 理想的半导体开关 |
IGBT (Ideal, Switching) | Ideal insulated-gate bipolar transistor for switching applications |
MOSFET (Ideal, Switching) | 用于交换应用的理想N沟道MOSFET |
N-Channel IGBT | N-Channel insulated gate bipolar transistor |
N-Channel JFET | N沟道结场效应晶体管 |
n沟道LDMOS场效应晶体管 | N-Channel laterally diffused metal oxide semiconductor or vertically diffused metal oxide semiconductor transistors suitable for high voltage |
N沟道MOSFET | N-Channel metal oxide semiconductor field effect transistor using either Shichman-Hodges equation or surface-potential-based model |
NPN双极晶体管 | NPN双极晶体管使用增强型EBERS-MOLL方程式 |
光耦合器 | Behavioral model of optocoupler as LED, current sensor, and controlled current source |
P频道JFET | P-Channel junction field-effect transistor |
P沟道LDMOS FET | P沟道横向扩散金属氧化物半导体或垂直扩散的金属氧化物半导体晶体管,适用于高压 |
P沟道MOSFET | p沟道我tal oxide semiconductor field-effect transistor using either Shichman-Hodges equation or surface-potential-based model |
PNP双极晶体管 | PNP bipolar transistor using enhanced Ebers-Moll equations |
进口MOSFET | Predefined MOSFET parameterized by external SPICE subcircuit |
Thyristor | Thyristor using NPN and PNP transistors |
Thyristor (Piecewise Linear) | Thyristor |
ee_getfutfiety |
计算效率作为耗散功率损耗的功能 |
EE_GETPOWERLOSSSSUMMARY. |
Calculate dissipated power losses and switching losses |
ee_getPowerLossTimeSeries |
Calculate dissipated power losses and switching losses, and return time series data |
Parameterizing Blocks from Datasheets
用于指定块参数的技术概述,以匹配来自制造商数据表的数据。
Specify block parameters for a Piecewise Linear Diode to match the data from manufacturer datasheets.
Specify block parameters for an Exponential Diode to match the data from manufacturer datasheets.
Specify block parameters for an Exponential Diode to match the SPICE netlist data.
Simulate generated heat and device temperature by using the thermal ports.
Plot Basic Characteristics for Semiconductor Blocks
Plot I-V curve for semiconductor device model, based on block parameter values.
根据指定的参数值验证MOSFET模型行为。